cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 1/6 BTD1768S3 cystek product specification general purpose npn epitaxial planar transistor bv ceo 80v BTD1768S3 i c 1a r cesat(max) 0.5 description the BTD1768S3 is designed for use in driver and out put stages of af amplifier and general purpose application. features ? low collector saturation voltage ? high breakdown voltage, v ceo =80v (min.) ? high collector current, i c(max) =1a (dc) ? pb-free package symbol outline absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 7 v collector current (dc) i c 1 a collector current (pulse) i cp 2 (note) a power dissipation p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating junction temperature range tj -55~+150 c storage temperature tstg -55~+150 c note : pulse test, p w 10ms, duty 2%. BTD1768S3 sot-323 b base c collector e emitter
cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 2/6 BTD1768S3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 180 - - v i c =50 a bv ceo 80 - - v i c =1ma bv ebo 7 - - v i e =50 a i cbo - - 100 na v cb =180v, i e =0 i ebo - - 100 na v eb =7v, i c =0 *v ce(sat) 1 - 0.15 0.3 v i c =500ma, i b =20ma *v ce(sat) 2 - 0.3 0.5 v i c =1a, i b =50ma *v be(sat) - 0.96 1.2 v i c =1a, i b =50ma *v be(on) 0.6 0.66 0.7 v v ce =2v, i c =50ma *h fe 1 180 - 560 - v ce =2v, i c =100ma *h fe 2 60 - - - v ce =2v, i c =500ma *h fe 3 20 - - - v ce =2v, i c =1a f t - 250 - mhz v ce =10v, i c =50ma, f=100mhz cob - 6 15 pf v cb =10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% classification of h fe 1 rank r s range 180~390 270~560 ordering information device package shipping BTD1768S3 sot-323 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 3/6 BTD1768S3 cystek product specification characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 collector current ---ic(ma) current gain---hfe hfe vce=5v vce=2v vce=1v saturation voltage vs collector current 10 100 1000 1 10 100 1000 collector current ---ic(ma) saturation voltage-(mv) vcesat ic=10ib ic=25ib ic=20ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current--- ic(ma) saturation voltage-(mv) vbesat@ic=20ib on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current--- ic(ma) on voltage-(mv) vbeon@vce=2v power derating curve 0 0.05 0.1 0.15 0.2 0.25 0 25 50 75 100 125 150 175 200 ambient temperature---ta() power dissipation---pd(w)
cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 4/6 BTD1768S3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 5/6 BTD1768S3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c304s3 issued date : 2009.11.19 revised date : page no. : 6/6 BTD1768S3 cystek product specification sot-323 dimension inches marking: te a j 3-lead sot-323 plastic surface mounted package cystek package code: s3 style: pin 1.base 2.emitter 3.collector he e a a1 q lp e1 e bp 12 3 d w b v a z detail z a c 0 12 scale mm millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0315 0.0433 0.80 1.10 e1 0.0256 - 0.65 - a1 0.0000 0.0039 0.00 0.10 he 0.0787 0.0886 2.00 2.25 bp 0.0118 0.0157 0.30 0.40 lp 0.0059 0.0177 0.15 0.45 c 0.0039 0.0098 0.10 0.25 q 0.0051 0.0091 0.13 0.23 d 0.0709 0.0866 1.80 2.20 v 0.0079 - 0.2 - e 0.0453 0.0531 1.15 1.35 w 0.0079 - 0.2 - e 0.0512 - 1.3 - - - 10 0 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
|
